PART |
Description |
Maker |
HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
27C4096-12 27C4096-10 |
4M-BIT [512K x 8/256K x 16] CMOS EPROM 4分位[12k × 8/256K × 16]的CMOS存储
|
Macronix International Co., Ltd.
|
LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM CAC 3C 3#12 PIN PLUG
|
AMIC Technology, Corp. AMIC Technology Corporation AMICC[AMIC Technology]
|
MX29F022NBPC-55 MX29F022NTPC-55 MX29F022BPC-55 MX2 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDSO32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 120 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 90 ns, PDIP32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 70 ns, PQCC32 2M-BIT[256K x 8]CMOS FLASH MEMORY 256K X 8 FLASH 5V PROM, 55 ns, PDSO32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
K6R1004C1D K6R1004C1D-JC12 |
256K X 4 STANDARD SRAM, 12 ns, PDSO32 256K x 4 Bit (with /OE) High-Speed CMOS Static RAM Data Sheet
|
Samsung Electronic
|
EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory 2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution N.A. ETC[ETC]
|
MX27C4111 MX27C4111MC-10 MX27C4111MC-12 MX27C4111M |
4M-BIT [512K x8/256K x16] CMOS EPROM WITH PAGE MODE 256K X 16 OTPROM, 90 ns, PDIP40 SIGN, NO SMOKING, 250X350MM, RP; RoHS Compliant: NA
|
Macronix International Co., Ltd. PROM MCNIX[Macronix International]
|
V53C104Z-10L V53C104K-10 V53C104K-10L |
HIGH PERFORMANCE, LOW POWER 256K X 4 BIT FAST PAGE MODE CMOS DYNAMIC RAM 高性能,低功耗,256K × 4位快速页面模式的CMOS动态随机存储器
|
Mosel Vitelic, Corp.
|
27C2000 MX27C2000 MX27C2000MC-10 MX27C2000MC-12 MX |
2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDSO32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PDIP32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 70 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 90 ns, PQCC32 2M-BIT [256K x 8] CMOS EPROM 256K X 8 OTPROM, 55 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 256K X 8 OTPROM, 90 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-TO-220 -40 to 85 256K X 8 OTPROM, 45 ns, PDIP32 Single Output LDO, 3.0A, Fixed(1.8V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 85 Single Output LDO, 3.0A, Fixed(3.3V), Fast Transient Response, Reverse Current Protection 5-DDPAK/TO-263 -40 to 85
|
MACRONIX INTERNATIONAL CO LTD PROM Macronix International Co., Ltd. MCNIX[Macronix International]
|
K3N3C6000D-DC K3N3C6000D-DC10 |
256K X 16 MASK PROM, 100 ns, PDIP40 4M-Bit (256K x 16) CMOS MASK ROM(EPROM TYPE) Data Sheet
|
Samsung Electronic
|
KM616U4000BZ |
256K x 16 Bit Low Power and Low Voltage CMOS Static RAM(256K x 16位低功耗低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|